6 kV 5 kA RCGCT with advanced gate drive unit.

Authors :: Gruening, H.
Tsuchiya, T.
Satoh, K.
Yamaguchi, Y.
Mizohata, F.
Takao, K.
Source :: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216); 2001, p133-136, 4p
Publication Year :: 2001

Language :: English
ISBNs :: 9784886860569
Database :: Complementary Index
Journal :: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
Publication Type :: Conference
Accession number :: 81228526
Full Text :: https://doi.org/10.1109/ISPSD.2001.934574