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Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide.
- Source :
- Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850); 2004, p441-444, 4p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780384781
- Database :
- Complementary Index
- Journal :
- Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)
- Publication Type :
- Conference
- Accession number :
- 81238762
- Full Text :
- https://doi.org/10.1109/ESSDER.2004.1356586