Cite
Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process.
MLA
Summerfelt, S., et al. “Embedded Ferroelectric Memory Using a 130-Nm 5 Metal Layer Cu / FSG Logic Process.” Proceedings 2004 IEEE Computational Systems Bioinformatics Conference, Jan. 2004, pp. 153–54. EBSCOhost, https://doi.org/10.1109/NVMT.2004.1380833.
APA
Summerfelt, S., Aggarwal, S., Boku, K., Celii, F., Hall, L., Matz, L., Martin, S., McAdams, H., Remack, K., Rodriguez, J., Taylor, K., Udayakumar, K. R., Moise, T., Bailey, R., Depner, M., Fox, G., & Eliason, J. (2004). Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process. Proceedings 2004 IEEE Computational Systems Bioinformatics Conference, 153–154. https://doi.org/10.1109/NVMT.2004.1380833
Chicago
Summerfelt, S., S. Aggarwal, K. Boku, F. Celii, L. Hall, L. Matz, S. Martin, et al. 2004. “Embedded Ferroelectric Memory Using a 130-Nm 5 Metal Layer Cu / FSG Logic Process.” Proceedings 2004 IEEE Computational Systems Bioinformatics Conference, January, 153–54. doi:10.1109/NVMT.2004.1380833.