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Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs.
- Source :
- 2010 Device Research Conference (DRC); 2010, p195-196, 2p
- Publication Year :
- 2010
Details
- Language :
- English
- ISBNs :
- 9781424465620
- Database :
- Complementary Index
- Journal :
- 2010 Device Research Conference (DRC)
- Publication Type :
- Conference
- Accession number :
- 81350673
- Full Text :
- https://doi.org/10.1109/DRC.2010.5551904