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CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction.

Authors :
Coss, B.E.
Wei-Yip Loh
Jungwoo Oh
Smith, G.
Smith, C.
Adhikari, H.
Sassman, B.
Parthasarathy, S.
Barnett, J.
Majhi, P.
Wallace, R.M.
Jiyoung Kim
Jammy, R.
Source :
2009 Symposium on VLSI Technology; 2009, p104-105, 2p
Publication Year :
2009

Details

Language :
English
ISBNs :
9781424433087
Database :
Complementary Index
Journal :
2009 Symposium on VLSI Technology
Publication Type :
Conference
Accession number :
81549666

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