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Germanium-source tunnel field effect transistors with record high ION/IOFF.

Authors :
Sung Hwan Kim
Hei Kam
Chenming Hu
Tsu-Jae King Liu
Source :
2009 Symposium on VLSI Technology; 2009, p178-179, 2p
Publication Year :
2009

Details

Language :
English
ISBNs :
9781424433087
Database :
Complementary Index
Journal :
2009 Symposium on VLSI Technology
Publication Type :
Conference
Accession number :
81549695

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