TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction.

Details

Language :

English

ISBNs :

9781424477012

Database :

Complementary Index

Journal :

2010 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD)

Publication Type :

Conference

Accession number :

81594923

Full Text :

https://doi.org/10.1109/SISPAD.2010.5604506