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GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate.
- Source :
- 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p
- Publication Year :
- 2009
Details
- Language :
- English
- ISBNs :
- 9781424456390
- Database :
- Complementary Index
- Journal :
- 2009 IEEE International Electron Devices Meeting (IEDM)
- Publication Type :
- Conference
- Accession number :
- 81602553
- Full Text :
- https://doi.org/10.1109/IEDM.2009.5424397