Substituted aluminum metal gate on high-k dielectric for low work-function and Fermi-level pinning free.

Details

Language :

English

ISBNs :

9780780386846

Database :

Complementary Index

Journal :

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004

Publication Type :

Conference

Accession number :

81609670

Full Text :

https://doi.org/10.1109/IEDM.2004.1419138