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The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs.

Authors :
Cho, H.-J.
Lee, H.L.
Park, S.G.
Park, H.B.
Jeon, T.S.
Jin, B.J.
Kang, S.B.
Lee, S.G.
Kim, Y.P.
Jung, I.S.
Lee, J.W.
Shin, Y.G.
Chung, U.-I.
Moon, J.T.
Choi, J.H.
Jeong, Y.S.
Source :
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p503-506, 4p
Publication Year :
2004

Details

Language :
English
ISBNs :
9780780386846
Database :
Complementary Index
Journal :
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004
Publication Type :
Conference
Accession number :
81609733
Full Text :
https://doi.org/10.1109/IEDM.2004.1419201