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The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs.
- Source :
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p503-506, 4p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780386846
- Database :
- Complementary Index
- Journal :
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004
- Publication Type :
- Conference
- Accession number :
- 81609733
- Full Text :
- https://doi.org/10.1109/IEDM.2004.1419201