The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs.

MLA

Cho, H. J., et al. “The Effects of TaN Thickness and Strained Substrate on the Performance and PBTI Characteristics of Poly-Si/TaN/HfSiON MOSFETs.” IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, Jan. 2004, pp. 503–06. EBSCOhost, https://doi.org/10.1109/IEDM.2004.1419201.

APA

Cho, H.-J., Lee, H. L., Park, S. G., Park, H. B., Jeon, T. S., Jin, B. J., Kang, S. B., Lee, S. G., Kim, Y. P., Jung, I. S., Lee, J. W., Shin, Y. G., Chung, U.-I., Moon, J. T., Choi, J. H., & Jeong, Y. S. (2004). The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 503–506. https://doi.org/10.1109/IEDM.2004.1419201

Chicago

Cho, H.-J., H.L. Lee, S.G. Park, H.B. Park, T.S. Jeon, B.J. Jin, S.B. Kang, et al. 2004. “The Effects of TaN Thickness and Strained Substrate on the Performance and PBTI Characteristics of Poly-Si/TaN/HfSiON MOSFETs.” IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, January, 503–6. doi:10.1109/IEDM.2004.1419201.