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A robust 45 nm-node, dual damascene interconnects with high quality cu/barrier interface by a novel oxygen absorption process.
- Source :
- IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p77-80, 4p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9780780392687
- Database :
- Complementary Index
- Journal :
- IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
- Publication Type :
- Conference
- Accession number :
- 81610534
- Full Text :
- https://doi.org/10.1109/IEDM.2005.1609271