45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process.

MLA

Yu, S., et al. “45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, Jan. 2005, pp. 221–24. EBSCOhost, https://doi.org/10.1109/IEDM.2005.1609312.

APA

Yu, S., Lu, J.-P., Mehrad, F., Bu, H., Shanware, A., Ramin, M., Pas, M., Visokay, R., Vitale, S., Yang, S.-H., Jiang, P., Hall, L., Montgomery, C., Obeng, Y., Bowen, C., Hong, H., Tran, J., Chapman, R., Bushman, S., & Machala, S. (2005). 45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process. IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, 221–224. https://doi.org/10.1109/IEDM.2005.1609312

Chicago

Yu, S., J.-P. Lu, F. Mehrad, H. Bu, A. Shanware, M. Ramin, M. Pas, et al. 2005. “45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, January, 221–24. doi:10.1109/IEDM.2005.1609312.