4-bit per cell NROM reliability.

MLA

Eitan, B., et al. “4-Bit per Cell NROM Reliability.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, Jan. 2005, pp. 539–42. EBSCOhost, https://doi.org/10.1109/IEDM.2005.1609402.

APA

Eitan, B., Cohen, G., Shappir, A., Eli Lusky, Givant, A., Janai, M., Bloom, I., Polansky, Y., Dadashev, O., Lavan, A., Sahar, R., & Maayan, E. (2005). 4-bit per cell NROM reliability. IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, 539–542. https://doi.org/10.1109/IEDM.2005.1609402

Chicago

Eitan, B., G. Cohen, A. Shappir, Eli Lusky, A. Givant, M. Janai, I. Bloom, et al. 2005. “4-Bit per Cell NROM Reliability.” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest, January, 539–42. doi:10.1109/IEDM.2005.1609402.