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Carbon-doped InxGa1−xAs1−ySby on InP grown by metal-organic chemical vapor deposition.
- Source :
- 2010 International Conference on Indium Phosphide & Related Materials (IPRM); 2010, p1-4, 4p
- Publication Year :
- 2010
Details
- Language :
- English
- ISBNs :
- 9781424459193
- Database :
- Complementary Index
- Journal :
- 2010 International Conference on Indium Phosphide & Related Materials (IPRM)
- Publication Type :
- Conference
- Accession number :
- 81613075
- Full Text :
- https://doi.org/10.1109/ICIPRM.2010.5516333