Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics.

MLA

Qiang Lu, et al. “Molybdenum Metal Gate MOS Technology for Post-SiO2 Gate Dielectrics.” International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), Jan. 2000, pp. 641–44. EBSCOhost, https://doi.org/10.1109/IEDM.2000.904401.

APA

Qiang Lu, Lin, R., Ranade, P., Yee Chia Yeo, Xiaofan Meng, Takeuchi, H., Tsu-Jae King, Chenming Hu, Hongfa Luan, Songjoo Lee, Weiping Bai, Choong-Ho Lee, Dim-Lee Kwong, Xin Guo, Xiewen Wang, & Tso-Ping Ma. (2000). Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 641–644. https://doi.org/10.1109/IEDM.2000.904401

Chicago

Qiang Lu, R. Lin, P. Ranade, Yee Chia Yeo, Xiaofan Meng, H. Takeuchi, Tsu-Jae King, et al. 2000. “Molybdenum Metal Gate MOS Technology for Post-SiO2 Gate Dielectrics.” International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), January, 641–44. doi:10.1109/IEDM.2000.904401.