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InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure.
- Source :
- 2010 International Conference on Microwave & Millimeter Wave Technology (ICMMT); 2010, p1480-1482, 3p
- Publication Year :
- 2010
Details
- Language :
- English
- ISBNs :
- 9781424457052
- Database :
- Complementary Index
- Journal :
- 2010 International Conference on Microwave & Millimeter Wave Technology (ICMMT)
- Publication Type :
- Conference
- Accession number :
- 81631306
- Full Text :
- https://doi.org/10.1109/ICMMT.2010.5524946