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Simulation of off-state degradation at high temperature in High Voltage NMOS transistor with STI architecture.
- Source :
- 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2010, p189-192, 4p
- Publication Year :
- 2010
Details
- Language :
- English
- ISBNs :
- 9781424477180
- Database :
- Complementary Index
- Journal :
- 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
- Publication Type :
- Conference
- Accession number :
- 81646863