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Self consistent simulation for C-V characterization of sub 10nm Tri-Gate and Double Gate SOI FinFETs incorporating quantum mechanical effects.
- Source :
- 2009 IEEE Student Conference on Research & Development (SCOReD); 2009, p284-287, 4p
- Publication Year :
- 2009
Details
- Language :
- English
- ISBNs :
- 9781424451869
- Database :
- Complementary Index
- Journal :
- 2009 IEEE Student Conference on Research & Development (SCOReD)
- Publication Type :
- Conference
- Accession number :
- 81658956
- Full Text :
- https://doi.org/10.1109/SCORED.2009.5443019