Cite
Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations.
MLA
Changhwan Shin, et al. “Tri-Gate Bulk MOSFET Design for Improved Robustness to Random Dopant Fluctuations.” Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE, Jan. 2008, pp. 1–2. EBSCOhost, https://doi.org/10.1109/SNW.2008.5418451.
APA
Changhwan Shin, Carlson, A., Xin Sun, Kanghoon Jeon, & Tsu-Jae King Liu. (2008). Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations. Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE, 1–2. https://doi.org/10.1109/SNW.2008.5418451
Chicago
Changhwan Shin, A. Carlson, Xin Sun, Kanghoon Jeon, and Tsu-Jae King Liu. 2008. “Tri-Gate Bulk MOSFET Design for Improved Robustness to Random Dopant Fluctuations.” Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE, January, 1–2. doi:10.1109/SNW.2008.5418451.