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Formation of strained Si/SiGe on insulator structure with a [110] surface.

Authors :
Sugiyama, N.
Mizuno, T.
Moriyama, Y.
Nakaharai, S.
Tezuka, T.
Takagi, S.
Source :
IEEE International SOI Conference, 2003; 2003, p130-131, 2p
Publication Year :
2003

Details

Language :
English
ISBNs :
9780780378155
Database :
Complementary Index
Journal :
IEEE International SOI Conference, 2003
Publication Type :
Conference
Accession number :
81664923
Full Text :
https://doi.org/10.1109/SOI.2003.1242925