Multi-VT engineering in highly scaled CMOS bulk and FinFET devices through Ion Implantation into the metal gate stack featuring a 1.0nm EOT high-K oxide.

Details

Language :

English

ISBNs :

9781424450633

Database :

Complementary Index

Journal :

2010 International Symposium on VLSI Technology Systems & Applications (VLSI-TSA)

Publication Type :

Conference

Accession number :

81674326

Full Text :

https://doi.org/10.1109/VTSA.2010.5488925