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What is the most important growth parameter on crystal quality of the silicon layer by LPE method?

Authors :
Ujihara, T.
Obara, K.
Usami, N.
Fujiwara, K.
Sazaki, G.
Shishido, T.
Nakajima, K.
Source :
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, 2003; 2003, p1241-1241, 1p
Publication Year :
2003

Details

Language :
English
ISBNs :
9784990181604
Database :
Complementary Index
Journal :
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, 2003
Publication Type :
Conference
Accession number :
81761211

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