Experimental verification of the principle of operation of Si and SiGe resistor load flip-flop and Si resistor load ring oscillator of n channel vertical dual carrier field effect transistor.

Details

Language :

English

ISBNs :

9780780365209

Database :

Complementary Index

Journal :

2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

Publication Type :

Conference

Accession number :

81903840

Full Text :

https://doi.org/10.1109/ICSICT.2001.981539