Pulse voltage stress degradation of 4H-SiC Schottky diodes studied by I-V and noise measurements.

Details

Language :

English

ISBNs :

9780780392144

Database :

Complementary Index

Journal :

CAS 2005 Proceedings 2005 International Semiconductor Conference, 2005

Publication Type :

Conference

Accession number :

81943012

Full Text :

https://doi.org/10.1109/SMICND.2005.1558802