Influence of Different Technological Parameters on the Accumulation Barrier of Nanostructure AlGaAs/GaAs.

This work had as main objective the determination of a characteristic quantity of a potential well which is surfasic density Ns. This parameter is very important given its importance to the mobility of two-dimensional electron gas using the concept of effective doping that we allowed to study the influence of different technological parameters on the performance of AlGaAs/GaAs heterojunction which we will consider later dynamic study of HEMT transistor in a rigorous and complete manner. [ABSTRACT FROM AUTHOR]