480-GHz f\max in InP/GaAsSb/InP DHBT With New Base Isolation \mu-Airbridge Design.

MLA

Zaknoune, M., et al. “480-GHz F\max in InP/GaAsSb/InP DHBT With New Base Isolation \mu-Airbridge Design.” IEEE Electron Device Letters, vol. 33, no. 10, Oct. 2012, pp. 1381–83. EBSCOhost, https://doi.org/10.1109/LED.2012.2210187.

APA

Zaknoune, M., Mairiaux, E., Roelens, Y., Waldhoff, N., Rouchy, U., Frijlink, P., Rocchi, M., & Maher, H. (2012). 480-GHz f\max in InP/GaAsSb/InP DHBT With New Base Isolation \mu-Airbridge Design. IEEE Electron Device Letters, 33(10), 1381–1383. https://doi.org/10.1109/LED.2012.2210187

Chicago

Zaknoune, M., E. Mairiaux, Y. Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, and H. Maher. 2012. “480-GHz F\max in InP/GaAsSb/InP DHBT With New Base Isolation \mu-Airbridge Design.” IEEE Electron Device Letters 33 (10): 1381–83. doi:10.1109/LED.2012.2210187.