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Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers.
- Source :
- IEEE Transactions on Magnetics; Nov2012, Vol. 48 Issue 11, p4111-4114, 4p
- Publication Year :
- 2012
-
Abstract
- In this work, arrays of MgO-based magnetic tunnel junction elements (5\times 20\ \mum^2) connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 48
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 82708286
- Full Text :
- https://doi.org/10.1109/TMAG.2012.2202887