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Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center.
- Source :
- IEEE Transactions on Nuclear Science; Dec2012 Part 1, Vol. 59 Issue 6, p3154-3159, 6p
- Publication Year :
- 2012
-
Abstract
- Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 59
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 84360301
- Full Text :
- https://doi.org/10.1109/TNS.2012.2221741