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Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center.

Authors :
Cascio, Ethan W.
Riley, Kent J.
McCormack, Joe
Flanagan, Rob
Source :
IEEE Transactions on Nuclear Science; Dec2012 Part 1, Vol. 59 Issue 6, p3154-3159, 6p
Publication Year :
2012

Abstract

Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
59
Issue :
6
Database :
Complementary Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
84360301
Full Text :
https://doi.org/10.1109/TNS.2012.2221741