Effect of polarity on Ni/InN interfacial reactions.

Authors :: Kragh-Buetow, K. C.
Weng, X.
Readinger, E. D.
Wraback, M.
Mohney, S. E.
Source :: Applied Physics Letters; 1/14/2013, Vol. 102 Issue 2, p021607-021607-4, 1p, 3 Black and White Photographs, 2 Graphs
Publication Year :: 2013
Abstract: Ni films on (0001) and ([formula]) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors. [ABSTRACT FROM AUTHOR]