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In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes.
- Source :
- Nature Nanotechnology; Feb2013, Vol. 8 Issue 2, p119-124, 6p, 3 Color Photographs, 1 Graph
- Publication Year :
- 2013
-
Abstract
- Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature, whereas an atomically thin layer of h-BN is a dielectric with a wide bandgap of ?5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be seamlessly stitched together, hybrid atomic layers with interesting electronic applications could be created. Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size ranging from tens of nanometres to millimetres. The resulting graphene/h-BN atomic layers can be peeled off the growth substrate and transferred to various platforms including flexible substrates. We also show that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
GRAPHENE
BORON nitride
CRYSTAL structure
LATTICE theory
BAND gaps
Subjects
Details
- Language :
- English
- ISSN :
- 17483387
- Volume :
- 8
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Nature Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 85270630
- Full Text :
- https://doi.org/10.1038/nnano.2012.256