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Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2.

Authors :
Wu, Sanfeng
Ross, Jason S.
Liu, Gui-Bin
Aivazian, Grant
Jones, Aaron
Fei, Zaiyao
Zhu, Wenguang
Xiao, Di
Yao, Wang
Cobden, David
Xu, Xiaodong
Source :
Nature Physics; Mar2013, Vol. 9 Issue 3, p149-153, 5p, 4 Graphs
Publication Year :
2013

Abstract

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time-reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain two-dimensional electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we investigate this possibility using polarization-resolved photoluminescence of bilayer MoS<subscript>2</subscript>, which has the same symmetry as bilayer graphene but has a bandgap in the visible spectrum allowing direct optical probing. We find that in bilayer MoS<subscript>2</subscript> the circularly polarized photoluminescence can be continuously tuned from −15% to 15% as a function of gate voltage, whereas in structurally non-centrosymmetric monolayer MoS<subscript>2</subscript> the photoluminescence polarization is gate independent. The observations are well explained as resulting from the continuous variation of orbital magnetic moments between positive and negative values through symmetry control. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
17452473
Volume :
9
Issue :
3
Database :
Complementary Index
Journal :
Nature Physics
Publication Type :
Academic Journal
Accession number :
85846339
Full Text :
https://doi.org/10.1038/nphys2524