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Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in \n-Mn0.04\Zn0.96\O/i-ZnGa2\O4\/ \n-GaN Structure With Highly Ultraviolet Detection Performance.
- Source :
- IEEE Electron Device Letters; Mar2013, Vol. 34 Issue 3, p423-425, 3p
- Publication Year :
- 2013
-
Abstract
- We report an \n-Mn0.04\Zn0.96\O\!(\MZO)\! \/\i-ZnGa2\O4\!\/\break\n-GaN structure both as a light-emitting diode and as an ultraviolet (UV) photodetector at forward and reverse biases, respectively. The n-MZO films were prepared on n-GaN coated sapphire substrates, followed by postdeposition thermal annealing treatment at 700 ^\circ\C, and an \i-ZnGa2\O4 interface layer was formed at the MZO/GaN interface after the annealing treatment. We found that the electroluminescence characteristics showed a transition from visible- to UV-dominant mode when the deposition temperature of the MZO film is from 100 ^ \circ\C to 300 ^\circ\C. For the UV detection performance, the devices based on the low-temperature deposition (100 ^\circ\C) of the MZO film showed the lowest dark current and the biggest ratio of photocurrent to dark current with a selectivity detectivity for 365 nm around light. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 34
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 85920716
- Full Text :
- https://doi.org/10.1109/LED.2012.2236295