Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure.

Details

Language :

English

ISSN :

02681242

Volume :

9

Issue :

9

Database :

Complementary Index

Journal :

Semiconductor Science & Technology

Publication Type :

Academic Journal

Accession number :

86086689

Full Text :

https://doi.org/10.1088/0268-1242/9/9/007