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High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 11/23/1995, Vol. 31 Issue 24, p2128-2130, 3p
- Publication Year :
- 1995
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 31
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 86346043
- Full Text :
- https://doi.org/10.1049/el:19951436