High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD.

Details

Language :

English

ISSN :

00135194

Volume :

32

Issue :

15

Database :

Complementary Index

Journal :

Electronics Letters (Institution of Engineering & Technology)

Publication Type :

Academic Journal

Accession number :

86346959

Full Text :

https://doi.org/10.1049/el:19960915