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InGaAs/InAlAs HEMTs with extremely low source and drain resistances.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 08/15/1996, Vol. 32 Issue 17, p1619-1621, 3p
- Publication Year :
- 1996
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 32
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 86347083
- Full Text :
- https://doi.org/10.1049/el:19961043