Cite
Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 µm wavelength range.
MLA
Shau, R., et al. “Low-Threshold InGaAlAs/InP Vertical-Cavity Surface-Emitting Laser Diodes for 1.8 Μm Wavelength Range.” Electronics Letters (Institution of Engineering & Technology), vol. 36, no. 15, July 2000, pp. 1286–87. EBSCOhost, https://doi.org/10.1049/el:20000934.
APA
Shau, R., Ortsiefer, M., Zigldrum, M., Rosskopf, J., Bo¨hm, G., Ko¨hler, F., & Amann, M.-C. (2000). Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 µm wavelength range. Electronics Letters (Institution of Engineering & Technology), 36(15), 1286–1287. https://doi.org/10.1049/el:20000934
Chicago
Shau, R., M. Ortsiefer, M. Zigldrum, J. Rosskopf, G. Bo¨hm, F. Ko¨hler, and M.-C. Amann. 2000. “Low-Threshold InGaAlAs/InP Vertical-Cavity Surface-Emitting Laser Diodes for 1.8 Μm Wavelength Range.” Electronics Letters (Institution of Engineering & Technology) 36 (15): 1286–87. doi:10.1049/el:20000934.