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Impact of substrate orientation on Ultra Thin BOX Fully Depleted SOI electrical performances.
- Source :
- 2012 13th International Conference on Ultimate Integration on Silicon (ULIS); 1/ 1/2012, p177-180, 4p
- Publication Year :
- 2012
-
Abstract
- In this paper, we compare the electrical properties of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FD-SOI) MOS devices for rotated and not rotated substrate with different gate lengths. We found a significant performance enhancement on FD-SOI PMOSFETs as expected, while keeping a good control of short channel effects. Surprisingly, to a lower extent, an improvement is also found for NMOS devices. We have also studied the carrier mobility degradation as a function of temperature and we point out the contribution of different mechanisms that reduce the mobility such as impurity Coulomb scattering, phonons and neutral defects as a function gate length. We find that there is no significant effect of rotated substrate on the mobility degradation. All these results are discussed and possible explanations are also given. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781467301916
- Database :
- Complementary Index
- Journal :
- 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
- Publication Type :
- Conference
- Accession number :
- 86492818
- Full Text :
- https://doi.org/10.1109/ULIS.2012.6193386