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3D FinFET and other sub-22nm transistors.

Authors :
Hu, Chenming
Source :
2012 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits; 1/ 1/2012, p1-5, 5p
Publication Year :
2012

Abstract

FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467309806
Database :
Complementary Index
Journal :
2012 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits
Publication Type :
Conference
Accession number :
86499606
Full Text :
https://doi.org/10.1109/IPFA.2012.6306337