An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs.

MLA

Poh, Chung Hang John, et al. “An X-Band to Ka-Band SPDT Switch Using 200 Nm SiGe HBTs.” 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Jan. 2012, pp. 183–86. EBSCOhost, https://doi.org/10.1109/SiRF.2012.6160118.

APA

Poh, C. H. J., Schmid, R. L., Cressler, J. D., & Papapolymerou, J. (2012). An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs. 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 183–186. https://doi.org/10.1109/SiRF.2012.6160118

Chicago

Poh, Chung Hang John, Robert L. Schmid, John D. Cressler, and John Papapolymerou. 2012. “An X-Band to Ka-Band SPDT Switch Using 200 Nm SiGe HBTs.” 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, January, 183–86. doi:10.1109/SiRF.2012.6160118.