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A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress.
- Source :
- 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems; 1/ 1/2012, p97-100, 4p
- Publication Year :
- 2012
-
Abstract
- An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781457713170
- Database :
- Complementary Index
- Journal :
- 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
- Publication Type :
- Conference
- Accession number :
- 86536097
- Full Text :
- https://doi.org/10.1109/SiRF.2012.6160152