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Simulation and characterization of GaN HEMT in high-frequency switched-mode power converters.

Authors :
Rodriguez, Miguel
Stahl, Greg
Costinett, Daniel
Maksimovic, Dragan
Source :
2012 IEEE 13th Workshop on Control & Modeling for Power Electronics (COMPEL); 1/ 1/2012, p1-6, 6p
Publication Year :
2012

Abstract

High switching frequencies can lead to converters with reduced size and high power density. Using RF/microwave devices, microwave design techniques can be applied to allow soft-switching of devices and thus high efficiency operation, at the cost of higher complexity and component count. This paper explores the use of microwave GaN High Electron Mobility Transistors (HEMT) to realize power conversion in the 10–100 MHz range using conventional PWM techniques that may enable simple, small and efficient converters. Several driver and test circuits are described, simulated and tested, and experimental results are also provided for a floating buck converter operating at 20 MHz and controlled using conventional PWM techniques. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781424493722
Database :
Complementary Index
Journal :
2012 IEEE 13th Workshop on Control & Modeling for Power Electronics (COMPEL)
Publication Type :
Conference
Accession number :
86536551
Full Text :
https://doi.org/10.1109/COMPEL.2012.6251781