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Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters.

Authors :
Filsecker, Felipe
Alvarez, Rodrigo
Bernet, Steffen
Source :
2012 IEEE Energy Conversion Congress & Exposition (ECCE); 1/ 1/2012, p2253-2260, 8p
Publication Year :
2012

Abstract

This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out for currents between 50 and 1000 A. Different dc link voltages (2.4, 3.0 and 3.6 kV), junction temperatures (from −25 to 125°C) and di/dt values (0.9–2.2 kA/µs at 1 kA) were considered for the analysis. The effects and interactions of the different parameters in the device behavior are discussed. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467308021
Database :
Complementary Index
Journal :
2012 IEEE Energy Conversion Congress & Exposition (ECCE)
Publication Type :
Conference
Accession number :
86549353
Full Text :
https://doi.org/10.1109/ECCE.2012.6342434