Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters.

This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out for currents between 50 and 1000 A. Different dc link voltages (2.4, 3.0 and 3.6 kV), junction temperatures (from −25 to 125°C) and di/dt values (0.9–2.2 kA/µs at 1 kA) were considered for the analysis. The effects and interactions of the different parameters in the device behavior are discussed. [ABSTRACT FROM PUBLISHER]