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High-power, high-linearity photodiodes for RF photonics.

Authors :
Campbell, J. C.
Beling, A.
Piels, Molly
Fu, Yang
Cross, Allen
Zhou, Qiugui
Peters, Jon
Bowers, John E.
Li, Zhi
Source :
COMMAD 2012; 1/ 1/2012, p215-216, 2p
Publication Year :
2012

Abstract

High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467330473
Database :
Complementary Index
Journal :
COMMAD 2012
Publication Type :
Conference
Accession number :
86601991
Full Text :
https://doi.org/10.1109/COMMAD.2012.6472437