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Comparing FICDM and wafer-level CDM test methods: Apples to Oranges?

Authors :
Jack, Nathan
Rosenbaum, Elyse
Source :
Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012; 1/ 1/2012, p1-9, 9p
Publication Year :
2012

Abstract

The on-chip stresses induced by FICDM, WCDM2, CC-TLP, and VF-TLP are compared on the basis of voltage monitor readings and IC functional failures. In general, core circuit failures induced by FICDM are replicated on the wafer level. Package-related parasitics increase the FICDM current rise-time at an I/O pad relative to that measured externally, causing miscorrelation with wafer-level testers. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781467314671
Database :
Complementary Index
Journal :
Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012
Publication Type :
Conference
Accession number :
86602401