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Comparing FICDM and wafer-level CDM test methods: Apples to Oranges?
- Source :
- Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012; 1/ 1/2012, p1-9, 9p
- Publication Year :
- 2012
-
Abstract
- The on-chip stresses induced by FICDM, WCDM2, CC-TLP, and VF-TLP are compared on the basis of voltage monitor readings and IC functional failures. In general, core circuit failures induced by FICDM are replicated on the wafer level. Package-related parasitics increase the FICDM current rise-time at an I/O pad relative to that measured externally, causing miscorrelation with wafer-level testers. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781467314671
- Database :
- Complementary Index
- Journal :
- Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012
- Publication Type :
- Conference
- Accession number :
- 86602401