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Doping geometries for 40G carrier-depletion-based silicon optical modulators.
- Source :
- OFC/NFOEC; 1/ 1/2012, p1-3, 3p
- Publication Year :
- 2012
-
Abstract
- A comparison is preformed between carrier-depletion modulators with different doping patterns to reach low VπLπ = 0.62 V·cm at DC with interdigitated and lateral PN junctions respectively, but also show modulation at 35 Gbit/s (errorfree). [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781467302623
- Database :
- Complementary Index
- Journal :
- OFC/NFOEC
- Publication Type :
- Conference
- Accession number :
- 86620134