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Backgate Modulation Technique for Higher Efficiency Envelope Tracking.
- Source :
- IEEE Transactions on Microwave Theory & Techniques; Apr2013, Vol. 61 Issue 4, p1599-1607, 9p
- Publication Year :
- 2013
-
Abstract
- A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal–semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 61
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 86693106
- Full Text :
- https://doi.org/10.1109/TMTT.2013.2247616