C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (Sled) Annealing.

Details

Language :

English

ISSN :

19464274

Volume :

1

Database :

Complementary Index

Journal :

MRS Online Proceedings Library

Publication Type :

Conference

Accession number :

86853120

Full Text :

https://doi.org/10.1557/PROC-1-353