A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps.

MLA

Meneghini, M., et al. “A Novel Degradation Mechanism of AlGaN/GaN/Silicon Heterostructures Related to the Generation of Interface Traps.” 2012 International Electron Devices Meeting, Jan. 2012, p. 1.4-13.3.4. EBSCOhost, https://doi.org/10.1109/IEDM.2012.6479035.

APA

Meneghini, M., Bertin, M., dal Santo, G., Stocco, A., Chini, A., Marcon, D., Malinowski, P. E., Mura, G., Musu, E., Vanzi, M., Meneghesso, G., & Zanoni, E. (2012). A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps. 2012 International Electron Devices Meeting, 1.4-13.3.4. https://doi.org/10.1109/IEDM.2012.6479035

Chicago

Meneghini, M., M. Bertin, G. dal Santo, A. Stocco, A. Chini, D. Marcon, P. E. Malinowski, et al. 2012. “A Novel Degradation Mechanism of AlGaN/GaN/Silicon Heterostructures Related to the Generation of Interface Traps.” 2012 International Electron Devices Meeting, January, 1.4-13.3.4. doi:10.1109/IEDM.2012.6479035.